YJQ40P03A

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Yangzhou Yangjie Electronic Technology Co., Ltd.

S-E651 Rev.3.0,20-Feb-20

www.21yangjie.com

■ Electrical Characteristics (TJ=25℃ unless otherwise noted)

Parameter Symbol Conditions Min Typ Max Units

Static Parameter

Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=-250μA -30 V

Zero Gate Voltage Drain Current IDSS VDS=-30V,VGS=0V,TC=25℃ -1 μA

Gate-Body Leakage Current IGSS VGS= ±25V, VDS=0V ±100 nA

Gate Threshold Voltage VGS(th) VDS= VGS, ID=-250μA -1.2 -1.8 -2.8 V

Static Drain-Source On-Resistance RDS(ON)

VGS= -20V, ID=-20A 8.6 13

mΩ

VGS= -10V, ID=-15A 9.8 15

VGS= -6.0V, ID=-12A 12.1 22

VGS= -4.5V, ID=-10A 15.5 25

Diode Forward Voltage VSD IS=-20A,VGS=0V -1.2 V

Dynamic Parameters

Input Capacitance Ciss

VDS=-15V,VGS=0V,f=1MHZ

2152

pF Output Capacitance Coss 308

Reverse Transfer Capacitance Crss 242

Gate Resistance Rg f= 1MHZ 20 Ω

Switching Parameters

Total Gate Charge Qg

VGS=-10V,VDS=-15V,ID=-12A

40.1

nC

Gate Source Charge Qgs 8.4

Gate Drain Charge Qgd 8.6

Reverse Recovery Charge Qrr

IF= -12A, di/dt=100A/us

7.8

Reverse Recovery Time trr 18

ns

Turn-on Delay Time tD(on)

VGS=-10V,VDD=-15V, ID=-1A, RGEN=2.5Ω

8

Turn-on Rise Time tr 19

Turn-off Delay Time tD(off) 75

Turn-off Fall Time tf 46

A. Pulse Test: Pulse Width≤300us,Duty cycle ≤2%.

B. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder

mounting surface of the drain pins. RθJC is guaranteed by design, while RθJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in 2 pad of 2oz copper.